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Pellentesque habitant morbi tristique senectus et netus et malesuada fames ac turpis egestas. Vestibulum tortor quam, feugiat vitae, ultricies eget, tempor sit amet, ante. Donec eu libero sit amet quam egestas semper. Aenean ultricies mi vitae est. Mauris placerat eleifend leo.
Pellentesque habitant morbi tristique senectus et netus et malesuada fames ac turpis egestas. Vestibulum tortor quam, feugiat vitae, ultricies eget, tempor sit amet, ante. Donec eu libero sit amet quam egestas semper. Aenean ultricies mi vitae est. Mauris placerat eleifend leo.
Pellentesque habitant morbi tristique senectus et netus et malesuada fames ac turpis egestas. Vestibulum tortor quam, feugiat vitae, ultricies eget, tempor sit amet, ante. Donec eu libero sit amet quam egestas semper. Aenean ultricies mi vitae est. Mauris placerat eleifend leo.
2N2222A is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor’s terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.
Features:-
• Advanced process technology
• Low error voltage
• Fast switching speed
• Full-voltage operation
• High power and current handling capability
Detailed Specifications:-
| Transistor Polarity | NPN |
| Collector-Base Voltage (VCBO) | 75V |
| Collector-Emitter Voltage (VCEO) | 40V |
| Emitter-Base Voltage (VEBO) | 6V |
| Continuous Collector Current (IC) | 0.6A |
| Collector-Base Capacitance (CCBO) | 8pF |
| Transition Frequency (fT) | 300MHz |
| DC Current Gain (hFE) | 300 |
| Operating Temperature Range | -65 – 175°C |
| Power Dissipation (PD) | 1.8W |
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