₹6.00
Pellentesque habitant morbi tristique senectus et netus et malesuada fames ac turpis egestas. Vestibulum tortor quam, feugiat vitae, ultricies eget, tempor sit amet, ante. Donec eu libero sit amet quam egestas semper. Aenean ultricies mi vitae est. Mauris placerat eleifend leo.
Pellentesque habitant morbi tristique senectus et netus et malesuada fames ac turpis egestas. Vestibulum tortor quam, feugiat vitae, ultricies eget, tempor sit amet, ante. Donec eu libero sit amet quam egestas semper. Aenean ultricies mi vitae est. Mauris placerat eleifend leo.
Pellentesque habitant morbi tristique senectus et netus et malesuada fames ac turpis egestas. Vestibulum tortor quam, feugiat vitae, ultricies eget, tempor sit amet, ante. Donec eu libero sit amet quam egestas semper. Aenean ultricies mi vitae est. Mauris placerat eleifend leo.
BD135 is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.
Features:-
• Low saturation voltage
• Simple drive requirements
• High safe operating area
• For low distortion complementary designs
• Easy to carry and handle
Detailed Specifications:-
| Transistor Polarity | NPN |
| Collector−Emitter Voltage (VCEO) | 45V |
| Collector−Base Voltage (VCBO) | 45V |
| Continuous Collector Current (Ic) | 1.5A |
| Continuous Base Current (Ib) | 0.5A |
| DC Current Gain (hFE) | 40-250 |
| Operating Temperature Range | -65 – 150°C |
| Power Dissipation (Pd) | 12.5W |
| Thermal Resistance (ΘJA) | 100°C/W |
| Thermal Resistance (ΘJC) | 10°C/W |
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