₹39.00
Pellentesque habitant morbi tristique senectus et netus et malesuada fames ac turpis egestas. Vestibulum tortor quam, feugiat vitae, ultricies eget, tempor sit amet, ante. Donec eu libero sit amet quam egestas semper. Aenean ultricies mi vitae est. Mauris placerat eleifend leo.
Pellentesque habitant morbi tristique senectus et netus et malesuada fames ac turpis egestas. Vestibulum tortor quam, feugiat vitae, ultricies eget, tempor sit amet, ante. Donec eu libero sit amet quam egestas semper. Aenean ultricies mi vitae est. Mauris placerat eleifend leo.
Pellentesque habitant morbi tristique senectus et netus et malesuada fames ac turpis egestas. Vestibulum tortor quam, feugiat vitae, ultricies eget, tempor sit amet, ante. Donec eu libero sit amet quam egestas semper. Aenean ultricies mi vitae est. Mauris placerat eleifend leo.
P30NF10 is apower MOSFET is the latest development of STMicroelectronis unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Features:-
• Exceptional dv/dt capability
• 100% avalanche tested
• Application oriented characterization
• Switching application
Detailed Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 100V |
| Continuous Drain Current (Id) | 35A |
| Drain-Source Resistance (Rds On) | 0.045Ohms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 55 nC |
| Operating Temperature Range | -55 – 175°C |
| Power Dissipation (Pd) | 115W |
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