TC4427 IC – Power MOSFET Driver IC

80.00

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Delivery & Return

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Delivery & Return

Pellentesque habitant morbi tristique senectus et netus et malesuada fames ac turpis egestas. Vestibulum tortor quam, feugiat vitae, ultricies eget, tempor sit amet, ante. Donec eu libero sit amet quam egestas semper. Aenean ultricies mi vitae est. Mauris placerat eleifend leo.

  Estimated Delivery:  Aug 08 Aug 12
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Product Details

The TC4427 is improved versions of the earlier TC4427 family of MOSFET drivers. The TC4427 devices have matched rise and fall times when charging and discharging the gate of a MOSFET. These devices are highly latch-up resistant under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking (of either polarity) occurs on the ground pin. They can accept, without damage or logic upset, up to 500 mA of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against Electrostatic Discharge (ESD) up to 2.0 kV. The TC4427 MOSFET drivers can easily charge/discharge 1000 pF gate capacitances in under 30 ns. These devices provide low enough impedances in both the On and Off states to ensure the MOSFET’s intended state is not affected, even by large transients. Other compatible drivers are the TC4427A family of devices. The TC4427A devices have matched leading and falling edge input-to-output delay times, in addition to the matched rise and fall times of the TC4427 devices.

Features:-

• High Peak Output Current: 1.5A
• Wide Input Supply Voltage Operating Range: – 4.5V to 18V
• High Capacitive Load Drive Capability: 1000 pF in 25 ns (typical)
• Short Delay Times: 40 ns (typical)
• Matched Rise and Fall Times
• Low Supply Current: – With Logic ‘1’ Input – 4 mA – With Logic ‘0’ Input – 400 µA
• Low Output Impedance: 7V
• Latch-Up Protected: Withstands 0.5A Reverse Current
• Input Withstands Negative Inputs Up to 5V
• Electrostatic Discharge (ESD) Protected: 2.0 kV
• Space-saving 8-Pin MSOP and 8-Pin 6×5 DFN-S Packages

Specification:-

Parameter Specification
Supply Voltage +22V
Input Voltage 730 mW
Package Power Dissipation 50 mA
Storage Temperature Range -65°C to +150°C
Maximum Junction Temperature +150°C

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